K3878 PDF Datasheet Search Results |
No | Part number | Description ( Function ) | Manufacturers | |
1 | K3878 | Field Effect Transistor 2SK3878TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)2SK3878Switching Regulator Applications• • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm | Toshiba |
K38 Data sheets |
Part No | Description ( Function) | Manufacturers | |
K389 | 2SK389 | Toshiba Semiconductor | |
K3816 | 2SK3816 Ordering number : EN8054A2SK3816N-Channel Power MOSFET60V, 40A, 26mΩ, TO-262-3L/TO-263-2Lhttp://onsemi.comFeatures• ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25°CParamete | ON Semiconductor | |
K3831 | 2SK3831 Ordering number : ENN80282SK3831N-Channel Silicon MOSFET2SK3831 General-Purpose Switching DeviceApplicationsFeatures• Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Motor drive, DC / DC Converter. • Avalanche resistance guarantee.Specifications | Sanyo Semicon Device |